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H7N0603DL, H7N0603DS
Silicon N Channel MOS FET High speed power Switching
REJ03G0123-0200 Rev.2.00 Jan.26.2005
Features
* Low on - resistance RDS (on) = 11 m typ. * Low drive current * Capable of 4.5 gate drive
Outline
PRSS0004ZD-B (Previous code: DPAK(L)-2)
D 4
PRSS0004ZD-C (Previous code: DPAK-(S))
4
G
12
3
1. Gate 2. Drain 3. Source 4. Drain
H7N0603DS
S 12 3
H7N0603DL
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25C 3. Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg Ratings 60 20 30 120 30 25 53.6 40 150 -55 to +150 Unit V V A A A A mJ W C C
Rev.2.00, Jan.26.2005, page 1 of 8
H7N0603DL, H7N0603DS
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer capacitance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time fall time Body - drain diode forward voltage Body - drain diode reverse recovery time Notes: 1. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 20 -- -- 1.5 -- -- 24 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 11 16 40 3200 385 225 56 11 12 30 125 90 17 0.9 30 Max -- -- 10 10 2.5 15 22 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test condition ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 VNote1 ID = 15 A, VGS = 4.5 VNote1 ID = 15 A, VDS = 10 VNote1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 30 A VGS = 10 V, ID = 15 A RL = 2.0 Rg = 4.7 IF = 30 A, VGS = 0Note1 IF = 30 A, VGS = 0 diF / dt = 100 A / s
Rev.2.00, Jan.26.2005, page 2 of 8
H7N0603DL, H7N0603DS
Main Characteristics
Power vs. Tmperature Derating 50 1000 300 Maximum Safe Operation Area
Pch (W)
(A)
40 30
100 30 10 3 1 0.3 Operation in 0.1 this area is 0.03 0.01 Ta = 25C 0.1 0.3 1
limited by RDS(on)
PW = 10 ms (1 shot)
10
DC Operation (Tc = 25C)
10
0
s
s
Channel Dissipation
ID
1 s m
20 10
0
50
100
150 Tc (C)
200
Drain Current
3
10
30
100
Case Temperature
Drain to Source Voltage
VDS (V)
Typical Output Characterristics 50 VGS = 10 V 5.0 V 4.5 V Pulse Test 50
Typical Trasfer Characteristics VDS = 10 V Pulse Test
ID
(A)
30 3.5 V 20
ID Drain Current
(A)
40
4.0 V
40
30
Drain Current
20 150C 10 25C Tc=-40C 0 2 4 6 8 VGS (V) 10 Gate to Source Voltage
10 3V 2.5 V 0 2 4 6 8 10 Drain to Source Voltage VDS (V)
Drain Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source State Resistance vs. Drain Current
Drain to Source Voltage VDS(on) (mV)
Pulse Test
Drain Source On State Resistance RDS(on) (m)
500
100
Pulse Test
30
400
300 ID = 20 A 200 10 A 5A 0 12 4 8 Gate to Source Voltage 16 VGS (V) 20
VGS = 4.5 V
10
10 V
100
3
1
1
10 3 Drain Current
ID
30 (A)
100
Rev.2.00, Jan.26.2005, page 3 of 8
H7N0603DL, H7N0603DS
Static Drain to State Resistance vs. Temperature
Drain Source On State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
50 Pulse Test 40
100 Tc = -40C 10 1 0.1 0.01 25C 150C
30 5, 10, 20 A 20 4.5 V 10 VGS = 10 V 0 -50 0 5, 10, 20 A 50 100 Tc (C) 150
0.001
VDS = 10 V Pulse Test 0.1 1 (A) 10 100 Drain Current ID
0.0001 0.001 0.01
Case Temperature
Body-Drain Diode Reverse Recovery Time 1000
Reverse Recovery Time trr (ns)
Typical Capacitance vs. Drain to Source Voltage 10000 3000
Capacitance C (pF)
300 100 30 10 3 1 0.1
di / dt = 100 A / s VGS = 0, Ta = 25C
Ciss
1000 300 100 Coss Crss
0.3
1
3
10
30 IDR
100 (A)
Reverse Drain Current
30 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Switching Characteristics
Dynamic Input Characteristics 100
(V)
20 ID = 30 A
(V)
1000 300
Switching Time t (ns)
VGS 16
tr tf td(off) td(on) tr tf
VDS
80 VDD = 50 V 25 V 10 V
VGS
100 30 10
Drain to Source Voltage
VDS
40
8
Gate Source Voltage
60
12
20
VDD = 50 V 25 V 10 V 20 40 60 Reverse Drain Current
4 0 80 100 Qg (nc)
0
VGS = 10 V, VDD = 30 V 3 PW = 5 s, duty < 1 % Rg = 4.7 1 0.1 0.3 3 10 1 30 Drain Current ID (A)
100
Rev.2.00, Jan.26.2005, page 4 of 8
H7N0603DL, H7N0603DS
Reverse Drain Current vs. Source to Drain Voltage 50
(A)
Maximum Avalanche Energy vs. Channel Temperature Derating
(mJ)
80 IAP = 25 A VDD = 25 V duty < 0.1 % Rg > 50
10 V 40
Repetitive Avalanche Energy EAR
Reverse Drain Current IDR
64
30
48
5V
20 VGS = 0, -5 V Pulse Test 0 0.4 0.8 1.2 1.6 VSD 2.0 (V) Source to Drain Voltage
32
10
16 0 25
50
75
100
125
150
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
s (t)
3 Tc = 25C
Normalized Transient Thermal Impedance
1
D=1 0.5
0.3
0.2
0.1
0.1
0.05
0.0 2
ch - c(t) = s (t) * ch - c ch - c = 3.125C/ W, Tc = 25C
PDM
0.03
1 0.0
D=
PW T
PW T
1sh
ot
0.01 10
100
1m
10 m 100 m Pulse Width PW (S)
1
10
Avalanche Test Circuit EAR =
Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Rev.2.00, Jan.26.2005, page 5 of 8
H7N0603DL, H7N0603DS
Switching Time Test circuit Switching Time Waveform
Vin Monitor Rg D.U.T. RL
Vout Monitor Vin Vout 10% 10% 90% td(on) tr 90% td(off)
90%
10%
Vin 10 V
V DS = 30 V
tf
Rev.2.00, Jan.26.2005, page 6 of 8
H7N0603DL, H7N0603DS
Package Dimensions
* H7N0603DL
JEITA Package Code
RENESAS Code
PRSS0004ZD-B
Previous Code DPAK(L)-(2) / DPAK(L)-(2)V
MASS[Typ.] 0.42g
Unit: mm
6.5 0.5 5.4 0.5
1.7 0.5
2.3 0.2 0.55 0.1
4.7 0.5
16.2 0.5
3.1 0.5
1.15 0.1 0.8 0.1 (0.7)
5.5 0.5
1.2 0.3
0.55 0.1 2.29 0.5 2.29 0.5
0.55 0.1
* H7N0603DS
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code DPAK(S) / DPAK(S)V
MASS[Typ.] 0.28g
Unit: mm
1.5 0.5
6.5 0.5 5.4 0.5
(0.1) (0.1)
2.3 0.2 0.55 0.1
(5.1)
5.5 0.5
1.2 Max
0 - 0.25
(1.2)
2.5 0.5
1.0 Max. 2.29 0.5
0.8 0.1 2.29 0.5
0.55 0.1
Rev.2.00, Jan.26.2005, page 7 of 8
(5.1)
H7N0603DL, H7N0603DS
Ordering Information
Part Name H7N0603DL H7N0603DSTL H7N0603DL-E H7N0603DSTL-E Quantity 100 pcs 3000 pcs 100 pcs 3000 pcs Sack Taping Sack Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00, Jan.26.2005, page 8 of 8
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0

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